Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2011-03-29

2011-03-29

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000

Reexamination Certificate

active

07916522

ABSTRACT:
A semiconductor memory device includes n resistance change elements which are arranged in one cell, have a low-resistance state and a high resistance state, are connected in series or parallel, have different resistance values in the same resistance state, and change between the low-resistance state and the high-resistance state under different conditions, and a write circuit which is connected to one end of the n resistance change elements, and applies a pulse current m (1≦m≦n) times to the n resistance change elements during a write operation. Letting Im be a current value of an mth pulse current, condition I1>I2> . . . >Im holds.

REFERENCES:
patent: 5695864 (1997-12-01), Slonczewski
patent: 6944048 (2005-09-01), Iwata
patent: 2004/0095805 (2004-05-01), Matsuoka
patent: 2005/0157538 (2005-07-01), Moriyama et al.
patent: 2005/0232002 (2005-10-01), Iwata
patent: 2003-229547 (2003-08-01), None

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