Structure to measure both interconnect resistance and...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000

Reexamination Certificate

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07900164

ABSTRACT:
A structure for measuring both interconnect resistance and capacitance. The structure comprises a plurality of metallic interconnects, a first circuit for measuring capacitance charging current at a first interconnect and a second circuit for measuring the voltage drop between two positions at a second interconnect. The first circuit includes two electrically connected pseudo-inverters. Two control signals are fed into the two pseudo-inverters such that their associated capacitances are charged and discharged periodically. The first interconnect capacitance is determined by measuring the difference of charging currents between the two pseudo-inverters. A constant current flows through the second circuit and the interconnect resistance is determined by the voltage drop and the constant current.

REFERENCES:
patent: 6499129 (2002-12-01), Srinivasan et al.
patent: 6763504 (2004-07-01), Rao et al.
patent: 2004/0139406 (2004-07-01), Kasapi

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