Method for fabricating a three-dimensional capacitor

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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Details

C438S238000, C438S239000, C438S240000, C438S381000, C438S393000, C257SE21010, C257S306000, C257S310000

Reexamination Certificate

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07888231

ABSTRACT:
A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed.

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European Search Report from corresponding European Application No. 05255060, mailed Jul. 15, 2008.
Chinese Office Action dated Mar. 21, 2008 (with English translation).
Gurtej S. Sandhu et al., “Integration of High Aspect Ratio Structures”, Electrochemical Society, 2005, p. 395.

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