Semiconductor device and manufacturing process therefor

Details Semiconductor device and manufacturing process therefor Semiconductor device and manufacturing process therefor

2011-06-28

2011-06-28

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C438S618000, C438S622000

Reexamination Certificate

active

07969010

ABSTRACT:
A semiconductor device has a semiconductor substrate, a first interconnect made of a copper-containing metal which is formed over the semiconductor substrate, a conductive first plug formed over the first interconnect and connected to the first interconnect, a Cu silicide layer over the first interconnect in an area other than the area where the first plug is formed, a Cu silicide layer over the first plug, and a first porous MSQ film formed over an area from the side surface of the first interconnect to the side surface of the first plug and covering the side surface of the first interconnect, the upper portion of the first interconnect and the side surface of the first plug.

REFERENCES:
patent: 6297557 (2001-10-01), Bothra
patent: 6869873 (2005-03-01), Bradshaw et al.
patent: 7214594 (2007-05-01), Wong et al.
patent: 2001/0021578 (2001-09-01), Yasuda
patent: 2003/0089928 (2003-05-01), Saito et al.
patent: 2004/0232552 (2004-11-01), Wang et al.
patent: 2003-152077 (2003-05-01), None

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