Magnetoresistive element and magnetic random access memory

Details Magnetoresistive element and magnetic random access memory Magnetoresistive element and magnetic random access memory

2011-02-22

2011-02-22

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S117000, C365S131000, C365S145000, C365S173000, C365S213000

Reexamination Certificate

active

07894249

ABSTRACT:
A magnetoresistive element includes a free layer a pinned layer; a nonmagnetic layer interposed between the free layer and the pinned layer; and two magnetic layers arranged adjacent to the free layer on an opposite side to the pinned layer. The free layer includes: a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer interposed between the first magnetic layer and the second magnetic layer. Magnetization of the first magnetic layer and magnetization of the second magnetic layer are antiferromagnetically coupled. One of the two magnetic layers is in contact with one end of the free layer in a long-axis direction, and the other of the two magnetic layers is in contact with the other end of the free layer in the long-axis direction.

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PCT/IB/373.
PCT/IB/338.
English-Language Translation of PCT/ISA/237.

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