Semiconductor integrated circuit device

Static information storage and retrieval – Read/write circuit – Bad bit

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365 63, G11C 700

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active

060646063

ABSTRACT:
A nonvolatile storage element of single-layer gate structure constructed by arranging a floating gate formed of a conductive layer to partly overlap with a control gate formed of a diffused layer is provided with a barrier layer covering a part or the whole of the surface of the floating gate. Such nonvolatile storage elements are used for redundancy control of defects or change of functions.

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