Nonvolatile integrated circuit memory devices and methods of ope

Static information storage and retrieval – Floating gate – Particular biasing

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36518524, G11C 1600

Patent

active

060645962

ABSTRACT:
An electrically erasable and programmable non-volatile semiconductor memory device and method of erasing the same device are provided. A fail bit counter is provided for the device and method. The fail bit counter counts erase fail bits during the sector erase operation. An erase control circuit selectively terminates the sector erase operation depending upon erase fail bit number.

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patent: 5930173 (1999-07-01), Sekiguchi

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