Static information storage and retrieval – Floating gate – Particular biasing
Patent
1998-12-17
2000-05-16
Nguyen, Tan T.
Static information storage and retrieval
Floating gate
Particular biasing
36518524, G11C 1600
Patent
active
060645962
ABSTRACT:
An electrically erasable and programmable non-volatile semiconductor memory device and method of erasing the same device are provided. A fail bit counter is provided for the device and method. The fail bit counter counts erase fail bits during the sector erase operation. An erase control circuit selectively terminates the sector erase operation depending upon erase fail bit number.
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Choi Ki-Hwan
Park Jong-Min
Nguyen Tan T.
Samsung Electronics Co,. Ltd.
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