Sonos device with insulating storage layer and P-N junction...

Details Sonos device with insulating storage layer and P-N junction... Sonos device with insulating storage layer and P-N junction...

2011-03-22

2011-03-22

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29309

Reexamination Certificate

active

07910980

ABSTRACT:
The present invention provides a semiconductor device and a method for manufacturing thereof. The semiconductor device includes bit lines disposed in a semiconductor substrate, a first ONO disposed between the bit lines on the semiconductor substrate, and a second ONO film disposed on each of the bit lines. The film thickness of a first silicon nitride film in the first ONO film is larger than the film thickness of a second silicon nitride film in the second ONO film.

REFERENCES:
patent: 7307879 (2007-12-01), Yokoi et al.
patent: 2006/0278936 (2006-12-01), Fujii et al.
patent: 2007/0210373 (2007-09-01), Utsuno et al.
patent: 2008/0191321 (2008-08-01), Fujii et al.
patent: 2008/0224275 (2008-09-01), Hayakawa et al.

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