Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-09
2011-08-09
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21640, C257SE27062, C438S199000
Reexamination Certificate
active
07994585
ABSTRACT:
A semiconductor device according to the present invention includes: a semiconductor layer; an element separating portion, formed in a top layer portion of the semiconductor layer and separating, in the semiconductor layer, a first element forming region for forming a first conductive type MOSFET and a second element forming region for forming a second conductive type MOSFET; a first gate insulating film, selectively formed on a top surface of the semiconductor layer in the first element forming region; a first gate electrode, formed on the first gate insulating film; a first sidewall, formed at a periphery of the first gate insulating film and the first gate electrode; a second gate insulating film, selectively formed on a top surface of the semiconductor layer in the second element forming region; a second gate electrode, formed on the second gate insulating film; and a second sidewall, formed at a periphery of the second gate insulating film and the second gate electrode. The first sidewall includes: a base, contacting the top surface of the semiconductor layer; and a main body, formed on the base and protruding laterally beyond a peripheral edge of the base.
REFERENCES:
patent: 2005/0116360 (2005-06-01), Huang et al.
patent: 2006/0001104 (2006-01-01), Ookura
patent: 2006/0118892 (2006-06-01), Wu et al.
patent: 2006/0189056 (2006-08-01), Ko et al.
patent: 2006-019327 (2006-01-01), None
Quinto Kevin
Rabin & Berdo PC
Rohm & Co., Ltd.
Tran Minh-Loan T
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