Pulsed magnetron sputtering deposition with preionization

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Reexamination Certificate

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C204S298020, C204S298080

Reexamination Certificate

active

07927466

ABSTRACT:
The present invention relates to the deposition in a magnetron reactor (1) equipped with a magnetron cathode (MC) of at least one material on a substrate (11a), according to which process said material is vaporized by magnetron sputtering, using a gas that is ionized in pulsed mode. To this effect and in order to favour the formation of high current pulses of short duration while avoiding the formation of electric arcs and while enabling an effective ionisation of the sputtered vapour, a preionization of the said gas prior to the application of the main voltage pulse on the magnetron cathode (MC) is carried out in order to generate current pulses (CP) whose decay time (Td), after cut-off of the main voltage pulse (VP) is shorter than 5 μs.

REFERENCES:
patent: 6662793 (2003-12-01), Allen et al.
patent: 2005/0092596 (2005-05-01), Kouznetsov
patent: WO 02/103078 (2002-12-01), None
patent: WO 03/079397 (2003-09-01), None
International Preliminary Report on Patentability (translation), International Application No. PCT/BE2005/000038, date of actual completion of the corresponding international search Jul. 6, 2005, date of actual mailing of the corresponding international search report Jul. 14, 2005, 6 pages, European Patent Office.

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