Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-10
2011-05-10
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S421000, C438S003000
Reexamination Certificate
active
07939869
ABSTRACT:
A semiconductor device includes: a first source region and a first drain region formed at a distance from each other in a semiconductor substrate; a first gate insulating film formed on the semiconductor substrate between the first source region and the first drain region; a first gate electrode formed on the first gate insulating film; a first source electrode formed above the first source region and including a ferromagnetic layer having an easy axis of magnetization in a first direction; a first drain electrode formed above the first drain region and including a ferromagnetic layer magnetized in a second direction at an angle larger than 0 degrees but not larger than 180 degrees with respect to the first direction; and a second drain electrode formed above the first drain region, being located at a distance from the first drain electrode, and including a ferromagnetic layer magnetized in a direction substantially antiparallel to the second direction.
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Saito Yoshiaki
Tsuchiaki Masakatsu
Kabushiki Kaisha Toshiba
Le Thao X
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tran Thanh Y
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