Method of film deposition

Details Method of film deposition Method of film deposition

2011-06-14

2011-06-14

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S648000, C438S653000, C118S708000, C118S725000

Reexamination Certificate

active

07960278

ABSTRACT:
The present invention is a method of film deposition that comprises a film-depositing step of supplying a high-melting-point organometallic material gas and a nitrogen-containing gas to a processing vessel that can be evacuated, so as to deposit a thin film of a metallic compound of a high-melting-point metal on a surface of an object to be processed placed in the processing vessel. A partial pressure of the nitrogen-containing gas during the film-depositing step is 17% or lower, in order to increase carbon density contained in the thin film.

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