Thin-film device, method for manufacturing thin-film device,...

Details Thin-film device, method for manufacturing thin-film device,... Thin-film device, method for manufacturing thin-film device,...

2011-06-28

2011-06-28

Sandvik, Benjamin P (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S151000, C438S155000, C257S071000, C257S072000, C257SE29117, C257SE29151, C257SE29273, C257SE27112, C257SE21094, C257SE21104, C257SE21411, C257SE21414

Reexamination Certificate

active

07968388

ABSTRACT:
A method for manufacturing a thin-film device includes forming a separation layer on a substrate, forming a base insulating layer on the separation layer, forming a thin-film device layer on the base insulating layer, bonding a transfer layer including the base insulating layer and the thin-film device layer to a transfer body with an adhesive, causing intralayer delamination or interfacial delamination in the separation layer, and removing the transfer layer from the substrate. The thin-film device layer includes a first wiring sublayer which is located at the bottom of the thin-film device layer and which is in contact with the base insulating layer, a dielectric sublayer which is in contact with a surface of the first wiring sublayer, a semiconductor sublayer electrically insulated from the first wiring sublayer with the dielectric sublayer, and a second wiring sublayer formed subsequently to the semiconductor sublayer. The first wiring sublayer includes electrodes located at the bottom of the thin-film device layer.

REFERENCES:
patent: 2003/0040164 (2003-02-01), Inoue et al.
patent: 2006/0138428 (2006-06-01), Ahn et al.
patent: 2006/0202202 (2006-09-01), Denda et al.
patent: 2009/0032819 (2009-02-01), Lim et al.
patent: 10-125931 (1998-05-01), None
patent: 2001-125138 (2001-05-01), None
patent: 2007-288078 (2007-11-01), None
patent: 2007-288080 (2007-11-01), None

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