Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2011-04-19
2011-04-19
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S463000, C257SE21599
Reexamination Certificate
active
07927973
ABSTRACT:
In a semiconductor wafer including a plurality of imaginary-divided-regions which are partitioned by imaginary-dividing-lines that are respectively arranged in a grid-like arrangement on the semiconductor wafer and a circumferential line that is the outer periphery outline of the semiconductor wafer, a mask is placed so as to expose an entirety of surfaces of the wafer corresponding to respective removal-regions. The removal-regions are regions in approximately triangular form partitioned by the circumferential line of the wafer and the imaginary-dividing-lines. Then, plasma etching is performed on a mask placement-side surface of the wafer, by which the semiconductor wafer is divided into the individual semiconductor devices along dividing lines while portions corresponding to the removal-regions of the wafer are removed.
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International Search Report issued in the International (PCT) Application of which the present application is the U.S. National Stage.
Arita Kiyoshi
Haji Hiroshi
Nakagawa Akira
Noda Kazuhiro
Landau Matthew C
Panasonic Corporation
Staniszewski Aaron
Wenderoth , Lind & Ponack, L.L.P.
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