Spin-current switchable magnetic memory element and method...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S171000, C365S173000

Reexamination Certificate

active

07894245

ABSTRACT:
A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.

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