Semiconductor memory device having multiple air gaps in...

Details Semiconductor memory device having multiple air gaps in... Semiconductor memory device having multiple air gaps in...

2011-02-08

2011-02-08

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S317000, C438S593000

Reexamination Certificate

active

07884415

ABSTRACT:
In a semiconductor device, each of a plurality of floating gate electrodes has an upper end, a lower end and an intermediate portion between the upper and lower ends and is formed so that the intermediate portion has a smaller length in a gate-length direction than each of the upper and lower ends. Each of a plurality of control gate electrodes has an upper end, a lower end and an intermediate portion between the upper and lower ends and is formed so that the intermediate portion has a smaller length in a gate-length direction than each of the upper and lower ends. Each of a plurality of inter-electrode insulating films includes a first air gap formed in a first portion corresponding to the intermediate portion of each floating gate electrode and a second air gap formed in a second portion corresponding to the intermediate portion of each control gate electrode.

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