Semiconductor device and method of forming shielding along a...

Details Semiconductor device and method of forming shielding along a... Semiconductor device and method of forming shielding along a...

2011-02-01

2011-02-01

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C257S687000, C257S704000, C257SE23127, C257SE23193

Reexamination Certificate

active

07880275

ABSTRACT:
A semiconductor device has a semiconductor die with a peripheral region around the die. A first insulating material is deposited in the peripheral region. A conductive via is formed through the first insulating material. A conductive layer is formed over the semiconductor die. The conductive layer is electrically connected between the conductive via and a contact pad of the semiconductor die. A second insulating layer is deposited over the first insulating layer, conductive layer, and semiconductor die. A profile is formed in the first and second insulating layers in the peripheral region. The profile is tapered, V-shaped, truncated V-shape, flat, or vertical. A shielding layer is formed over the first and second insulating layers to isolate the semiconductor die from inter-device interference. The shielding layer conforms to the profile in the peripheral region and electrically connects the shielding layer to the conductive via.

REFERENCES:
patent: 6838748 (2005-01-01), Ishio et al.
patent: 6900079 (2005-05-01), Kinsman et al.
patent: 7656018 (2010-02-01), Bauer et al.
patent: 2007/0267725 (2007-11-01), Lee et al.

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