Semiconductor device

Details Semiconductor device Semiconductor device

2011-02-22

2011-02-22

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27106, C257S361000

Reexamination Certificate

active

07893498

ABSTRACT:
A semiconductor device10comprises a P type base region13formed in an N−type base region11, and N+type emitter regions14formed plurally in the P type base region13so as to be spaced form each other. The N+type emitter regions14are formed such that the rate of the area occupied by the N+type emitter region14in the P type base region13at the center part of the semiconductor device10is smaller than the rate of the area occupied by the N+type emitter region14in the P type base region13at the peripheral part of the semiconductor device10.

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