Porous silicon dielectric

Details Porous silicon dielectric Porous silicon dielectric

2011-07-05

2011-07-05

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S700000, C438S769000, C438S778000, C438S958000, C257S774000, C257SE23141, C257SE23145, C257SE23175, C257SE21575

Reexamination Certificate

active

07972954

ABSTRACT:
Embodiments of the invention provide a semiconductor device having dielectric material and its method of manufacture. A manufacturing method comprises forming a layer of silicon over a substrate, forming an opening through the layer of silicon, filling the opening with a conductor; and anodically etching the layer of silicon so as to form porous silicon. Embodiments may further include passivating the porous silicon such as by treating its surface with an organometallic compound. Other embodiments of the invention provide a semiconductor device comprising a layer comprising functional devices; and an interconnect structure over the layer, wherein the interconnect structure comprises a porous silicon dielectric. In an embodiment of the invention, the interconnect structure comprises a dual damascene interconnect structure. Other embodiments may include a passivation step after the step of oxidizing the porous silicon.

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