Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-22
2011-03-22
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S204000, C257S291000, C257SE21170, C257SE21185, C257SE21304, C257SE21435, C257SE27133, C257SE27159
Reexamination Certificate
active
07910963
ABSTRACT:
A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted regions and/or the lightly doped LDD regions and/or the enhancement implanted regions omitted from at least one side of the gate electrode. The low threshold transistor is electrically connected to a high voltage transistor with a high threshold voltage of about 0.7 V.
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Lerner David Littenberg Krumholz & Mentlik LLP
Nhu David
Round Rock Research, LLC
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