Semiconductor device including overcurrent protection element

Details Semiconductor device including overcurrent protection element Semiconductor device including overcurrent protection element

2011-08-16

2011-08-16

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S363000, C257S384000, C257SE29012

Reexamination Certificate

active

07999324

ABSTRACT:
A semiconductor device includes first, second, third, and fourth semiconductor regions, a gate electrode, and silicide layers. The first, second, and third semiconductor regions are formed in a semiconductor substrate while being spaced part from each other. The fourth semiconductor region is formed in the semiconductor substrate between the second semiconductor region and the third semiconductor region and has an electric resistance higher than the first, second, and third semiconductor regions. In a direction perpendicular to a direction to connect the first and second semiconductor regions, the fourth semiconductor region has a width smaller than that of the semiconductor substrate sandwiched between the first semiconductor region and the second semiconductor region. The gate electrode is formed above the semiconductor substrate between the first semiconductor region and the second semiconductor region. The silicide layer is formed on each of the first, second, third semiconductor regions and the gate electrode.

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Office Action from JPO in corresponding Japanese Patent Application No. 2004-358833 dated Jun. 7, 2011, and English language translation thereof, 8 pages.

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