Nonvolatile semiconductor memory device and fabrication...

Details Nonvolatile semiconductor memory device and fabrication... Nonvolatile semiconductor memory device and fabrication...

2011-04-05

2011-04-05

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257S324000, C257S325000, C257S326000, C257S411000, C257SE21179

Reexamination Certificate

active

07919806

ABSTRACT:
Disclosed herein is a nonvolatile semiconductor memory device, including a memory transistor. The memory transistor has a channel formation region defined between two source and drain regions formed on a semiconductor substrate a bottom insulating film, a charge storage film and a top insulating film formed in order at least on the channel formation region, the charge storage film having a charge storage function, and a gate electrode formed on the top insulating film. The bottom insulating film is formed from a plurality of films containing nitrogen such that the content of nitrogen of a lowermost one of the films which contacts with the channel formation region and an uppermost one of the films which contacts with the gate electrode is higher than that of the other one or ones of the films which exist between the uppermost and lowermost films.

REFERENCES:
patent: 6784484 (2004-08-01), Blomme et al.
patent: 6906390 (2005-06-01), Nomoto et al.
patent: 2006/0261401 (2006-11-01), Bhattacharyya
patent: 2007/0029625 (2007-02-01), Lue et al.
patent: 2007/0166904 (2007-07-01), Teo et al.
Kennedy et al. Journal of Applied Physics, vol. 85, No. 6 ( Mar. 1999), pp. 3319-3326.

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