Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-07-05
2011-07-05
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S790000, C257SE21260, C427S249150
Reexamination Certificate
active
07972975
ABSTRACT:
The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the dielectric layer comprises SiC and/or SiOC, and is obtained from at least one precursor comprising at least one —Si—C<SUB>n</SUB>—Si chain where n=1.
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Ghyka Alexander G
L'Air Liquide Societe Anonyme pour l'Etude et, l'Exploitation de
McQueeney Patricia E.
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