Small pixel for CMOS image sensors with vertically...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S059000, C257S072000, C257SE31058, C257SE27133

Reexamination Certificate

active

07928484

ABSTRACT:
A pixel of an image sensor, the pixel includes a floating diffusion node to sense photo-generated charge, a reset diode to reset the floating diffusion node in response to a reset signal, and a set diode to set the floating diffusion node.

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Hidekazu Takahashi et al., “A 1/2.7 inch Low-Noise CMOS Image Sensor for Full HD Camcorders,” 2007 IEEE International Solid-State Circuit Conference, Session 28, Paper 28.6,Digest of Technical Papers, pp. 510-511, 2007.
Office Action mailed Mar. 19, 2010 (U.S. Appl. No. 12/153,140, filed May 14, 2008).

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