Semiconductor device including a MOSFET and a Schottky junction

Details Semiconductor device including a MOSFET and a Schottky junction Semiconductor device including a MOSFET and a Schottky junction

Filed on

2011-08-30

Date issued

2011-08-30

Examiner

Huynh, Andy (Department: 2818)

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

C257S331000, C257S332000, C257S341000, C257SE21655, C257SE29201

Type

Reexamination Certificate

Status

active

Patent number

08008714

Description

ABSTRACT:
A semiconductor device, including a MOSFET, has a plurality of transistor cell regions disposed in a semiconductor substrate. A source electrode of the MOSFET is disposed over a main surface of the semiconductor substrate and is in contact with a top surface of a source region in each of the plurality of transistor cell regions. A drain electrode of the MOSFET is a disposed over a back surface of the semiconductor substrate and is electrically connected to the semiconductor substrate. A Schottky cell region is disposed between the plurality of transistor cell regions in the semiconductor substrate. The source electrode is in contact with a part of the main surface of the semiconductor so as to form a Schottky junction in the Schottky cell region.

REFERENCES:
patent: 5384270 (1995-01-01), Ueno
patent: 5814858 (1998-09-01), Williams
patent: 6040610 (2000-03-01), Noguchi et al.
patent: 6049108 (2000-04-01), Williams et al.
patent: 6078090 (2000-06-01), Williams et al.
patent: 6239463 (2001-05-01), Williams et al.
patent: 6320223 (2001-11-01), Hueting et al.
patent: 6359308 (2002-03-01), Hijzen et al.
patent: 6638850 (2003-10-01), Inagawa et al.
patent: 6781194 (2004-08-01), Baliga
patent: 6791143 (2004-09-01), Baliga
patent: 7-249770 (1995-09-01), None
patent: 10-150140 (1998-06-01), None
patent: 11-154748 (1999-06-01), None

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