Semiconductor device and fabricating method thereof

Details Semiconductor device and fabricating method thereof Semiconductor device and fabricating method thereof

2011-02-01

2011-02-01

Potter, Roy K (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S784000, C257SE23010, C438S679000

Reexamination Certificate

active

07880292

ABSTRACT:
A semiconductor device that allows an image sensor (in an upper area of a SiP semiconductor device) to exchange signals with a device in a lower area of a SiP semiconductor device. A semiconductor device includes at least one of: A semiconductor substrate having a photodiode area and a transistor area. A PMD (Pre Metal Dielectric) layer formed on and/or over the semiconductor substrate. At least one metal layers formed on and/or over the PMD layer. A first penetrating electrode penetrating the PMD layer and the at least one metal layers. A second penetrating electrode penetrating the semiconductor substrate and connected to the first penetrating electrode.

REFERENCES:
patent: 4348253 (1982-09-01), Subbarao et al.
patent: 6429509 (2002-08-01), Hsuan
patent: 6768205 (2004-07-01), Taniguchi et al.
patent: 7183654 (2007-02-01), Opheim

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