Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2011-04-12
2011-04-12
Rosasco, Stephen (Department: 1721)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S311000
Reexamination Certificate
active
07923176
ABSTRACT:
A mask includes a transparent substrate, a light-blocking layer and a halftone layer. The light-blocking layer includes a source electrode pattern portion including a first electrode portion, a second electrode portion and a third electrode portion, and a drain electrode pattern portion disposed between the second electrode portion and the third electrode portion. The halftone layer includes a halftone portion corresponding to a spaced-apart portion between the source electrode pattern portion and the drain electrode pattern portion, and a dummy halftone portion more protrusive than ends of the second electrode portion and the third electrode portion. Thus, a photoresist pattern corresponding to a channel portion of a thin film transistor (TFT) may be formed with a uniform thickness, to thereby prevent an excessive etching of the channel portion.
REFERENCES:
patent: 2002/0182545 (2002-12-01), Minami et al.
patent: 2002/0186332 (2002-12-01), Kwak et al.
patent: 2003/0091940 (2003-05-01), Nakao
patent: 2003/0203287 (2003-10-01), Miyagawa
patent: 2005/0208427 (2005-09-01), Hayano et al.
patent: 2007/0037070 (2007-02-01), Ohnuma et al.
Chai Chong-Chul
Chang Won-kie
Jeon Woo-Seok
Jung Mee-Hye
Kim Shi-Yul
Alam Rashid
Innovation Counsel LLP
Rosasco Stephen
Samsung Electronics Co,. Ltd.
LandOfFree
Mask and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Mask and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2624681