Method of fabricating polycrystalline semiconductor

Details Method of fabricating polycrystalline semiconductor Method of fabricating polycrystalline semiconductor

2011-08-30

2011-08-30

Sandvik, Benjamin (Department: 2893)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S502000, C438S509000, C438S530000, C438S532000, C438S660000, C438S661000, C438S662000, C438S663000, C257SE21077, C257SE21333, C257SE21324, C257SE21497

Reexamination Certificate

active

08008171

ABSTRACT:
Disclosed is a method of providing a poly-Si layer used in fabricating poly-Si TFT's or devices containing poly-Si layers. Particularly, a method utilizing at least one metal plate covering the amorphous silicon layer or the substrate, and applying RTA (Rapid Thermal Annealing) for light illuminating process, then the light converted into heat by the metal plate will further be conducted to the amorphous silicon layer to realize rapid thermal crystallization. Thus the poly-Si layer of the present invention is obtained.

REFERENCES:
patent: 5358574 (1994-10-01), Sopori
patent: 6277714 (2001-08-01), Fonash et al.
patent: 6642092 (2003-11-01), Voutsas et al.
patent: 2004/0253797 (2004-12-01), Huang et al.

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