Nitride semiconductor light-emitting device

Details Nitride semiconductor light-emitting device Nitride semiconductor light-emitting device

2011-02-08

2011-02-08

Smith, Zandra (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S014000, C257S079000, C257S088000, C257S094000, C257S096000, C257S097000, C257S103000

Reexamination Certificate

active

07884351

ABSTRACT:
In a nitride semiconductor light-emitting device (11), an emission region (17) has a quantum well structure (19), and lies between an n-type gallium nitride semiconductor region (13) and a p-type gallium nitride semiconductor region (15). The quantum well structure (19) includes a plurality of first well layers (21) composed of InxGa1-xN, one or a plurality of second well layers (23) composed of InyGa1-yN, and barrier layers (25). The first and second well layers (21) and (23) are arranged in alternation with the barrier layers (25). The second well layers (23) lie between the first well layers (21) and the p-type gallium nitride semiconductor region (15). The indium component y of the second well layers (23) is smaller than indium component x of the first well layers (21), and the thickness DW2of the second well layers (23) is greater than the thickness DW1of the first well layers (21).

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