Method to improve writer leakage in SiGe bipolar device

Details Method to improve writer leakage in SiGe bipolar device Method to improve writer leakage in SiGe bipolar device

2011-03-01

2011-03-01

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S536000, C257S565000, C257S632000, C257SE21009, C257SE21043, C257SE21214, C257SE21222, C257SE21461, C257SE21633, C257SE27015

Reexamination Certificate

active

07898038

ABSTRACT:
The invention, in one aspect, provides a method for fabricating a semiconductor device, which includes conducting an etch through an opening in an emitter layer to form a cavity from an underlying oxide layer that exposes a doped tub. A first silicon/germanium (SiGe) layer, which has a Ge concentration therein, is formed within the cavity and over the doped tub by adjusting a process parameter to induce a strain in the first SiGe layer. A second SiGe layer is formed over the first SiGe layer, and a capping layer is formed over the second SiGe layer.

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