Semiconductor topography including a thin oxide-nitride...

Details Semiconductor topography including a thin oxide-nitride... Semiconductor topography including a thin oxide-nitride...

2011-01-11

2011-01-11

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S787000, C438S791000, C438S792000, C257SE21278, C257SE21293

Reexamination Certificate

active

07867918

ABSTRACT:
A semiconductor topography is provided which includes a silicon dioxide layer with a thickness equal to or less than approximately 10 angstroms and a silicon nitride layer arranged upon the silicon dioxide layer. In addition, a method is provided which includes growing an oxide film upon a semiconductor topography in the presence of an ozonated substance and depositing a silicon nitride film upon the oxide film. In some embodiments, the method may include growing the oxide film in a first chamber at a first temperature and transferring the semiconductor topography from the first chamber to a second chamber while the semiconductor topography is exposed to a substantially similar temperature as the first temperature. In either embodiment, the method may be used to form a semiconductor device including an oxide-nitride gate dielectric having an electrical equivalent oxide gate dieletric thickness of less than approximately 20 angstroms.

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U.S. Appl. No. 10/074,884: “Semiconductor Topography Including a Thin Oxide-Nitride Stack and Method for Making the Same,” Krishnaswamy Ramkumar, filed on Feb. 13, 2002 28 pages.
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