Semiconductor device

Details Semiconductor device Semiconductor device

2011-07-26

2011-07-26

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S371000, C257SE27062

Reexamination Certificate

active

07986014

ABSTRACT:
A semiconductor device includes a semiconductor substrate, an nMISFET formed on the substrate, the nMISFET including a first dielectric formed on the substrate and a first metal gate electrode formed on the first dielectric and formed of one metal element selected from Ti, Zr, Hf, Ta, Sc, Y, a lanthanoide and actinide series and of one selected from boride, silicide and germanide compounds of the one metal element, and a pMISFET formed on the substrate, the pMISFET including a second dielectric formed on the substrate and a second metal gate electrode formed on the second dielectric and made of the same material as that of the first metal gate electrode, at least a portion of the second dielectric facing the second metal gate electrode being made of an insulating material different from that of at least a portion of the first dielectric facing the first metal gate electrode.

REFERENCES:
patent: 6407435 (2002-06-01), Ma et al.
patent: 6593634 (2003-07-01), Ohmi et al.
patent: 7105889 (2006-09-01), Bojarczuk, Jr. et al.
patent: 7709402 (2010-05-01), Ahn et al.
patent: 2002/0135030 (2002-09-01), Horikawa
patent: 2003/0160227 (2003-08-01), Misra et al.
patent: 2004/0207023 (2004-10-01), Nishiyama et al.
patent: 2005/0098839 (2005-05-01), Lee et al.
patent: 2005/0269634 (2005-12-01), Bojarczuk et al.
patent: 2002-280461 (2002-09-01), None
patent: 2004-214376 (2004-07-01), None
patent: 2004-228180 (2004-08-01), None
patent: 2004-289061 (2004-10-01), None
patent: 2008-511971 (2008-04-01), None
Notification of Reasons for Rejection mailed by the Japanese Patent Office on Apr. 21, 2009, for Japanese Application No. 2005-036575 with an English translation.
Yee-Chia, et al., Effects of High-κ Gate Dielectric Materials on Metal and Silicon Gate Workfunctions, IEEE Electron Device Letters, vol. 23, No. 6, pp. 342-344, (Jun. 2002).
Samavedam, et al., “Dual-Metal Gate CMOS with HfO2Gate Dielectric”, IEEE, IEDM, pp. 1-3, (2002).
Narayanan, et al., “Dual Work Function Metal Gate CMOS using CVD metal electrodes”, IEEE, Symposium on VLSI Technology, Digest of Technical Papers, pp. 192-193, (2004).
R. Ichihara et al., “Ta-based metal gates (Ta, TaBx, TaNxand TaCx)-Modulated Work Function and Improved Thermal Stability,” Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials (Sep. 13-15, 2005), pp. 850-851.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2620372