Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2011-06-28
2011-06-28
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257SE21521, C438S017000
Reexamination Certificate
active
07968878
ABSTRACT:
A serpentine double gated diode array for monitoring stress induced defects is disclosed. The diode array is configured with adjacent gate segments and gate loops in close proximity to active areas to maximize a sensitivity to stress induced defects. The diode array is compatible with conventional electrical testing. Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) may be used to isolate individual stress induced defects. Variations in the gate configuration allow estimation of effects of circuit layout on formation of stress induced defects.
REFERENCES:
patent: 6762918 (2004-07-01), Voldman
Aggarwal Rajni J.
Wang YuGuo
Brady III Wade J.
Garner Jacqueline J.
Quinto Kevin
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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