Semiconductor device having gate electrodes with different gate

Details Semiconductor device having gate electrodes with different gate Semiconductor device having gate electrodes with different gate

1997-12-17

2000-05-16

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257391, 257406, 257411, H01L 2976

Patent

active

060641029

ABSTRACT:
A semiconductor device having gate electrodes with different gate insulators and a process for fabricating such device is provided. Consistent with one embodiment of the invention, a semiconductor device is provided in which a first gate insulator is formed over a first region of a substrate. A second gate insulator, different than the first gate insulator, is formed over a second region of the substrate. Finally, one or more gate electrodes are formed over each of the first and second gate insulators. The first gate insulator may, for example, have a permittivity and/or a thickness which is different from that of the second gate insulator. For example, the first gate insulator may have a permittivity greater than 20, and the second gate insulator may have a permittivity less than 10.

REFERENCES:
patent: 4257832 (1981-03-01), Schwabe et al.
patent: 4342149 (1982-08-01), Jacobs et al.
patent: 4460980 (1984-07-01), Hagiwara et al.
patent: 5258645 (1993-11-01), Sato
patent: 5496753 (1996-03-01), Sakurai et al.
patent: 5520992 (1996-05-01), Douglas et al.

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