Semiconductor device having a portion of gate electrode formed o

Details Semiconductor device having a portion of gate electrode formed o Semiconductor device having a portion of gate electrode formed o

1996-06-27

2000-05-16

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257315, 257348, 257349, 257350, H01L 2906

Patent

active

060640901

ABSTRACT:
On an insulating film a mesa-isolation silicon layer is formed, in which a channel region and source/drain regions are included. A gate insulating film and a conducting layer as a part of a gate electrode are stacked on the mesa-isolation silicon layer. A sidewall of an insulating material is formed on side surfaces of the mesa-isolation silicon layer, gate insulating film, and conducting layer at an end portion of the channel region of the mesa-isolation silicon layer, and a gate electrode is formed on the conducting layer.

REFERENCES:
patent: 4753986 (1988-06-01), Matloubian
patent: 5477073 (1995-12-01), Wakai et al.
patent: 5592008 (1997-01-01), Yamazaki et al.
patent: 5596205 (1997-01-01), Reedy et al.
patent: 5693549 (1997-12-01), Kim
patent: 5763904 (1998-06-01), Nakajima et al.

Affiliated with

Also associated with

Rating

Semiconductor device having a portion of gate electrode formed o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a portion of gate electrode formed o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a portion of gate electrode formed o will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-260744