Semiconductor device having lateral IGBT

Details Semiconductor device having lateral IGBT Semiconductor device having lateral IGBT

1998-05-05

2000-05-16

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257343, 257401, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119

Patent

active

060640863

ABSTRACT:
An n-type buffer layer and a p-type base layer are formed in the surface of the n.sup.- -type drift layer. A p.sup.+ -type drain layer is formed in the surface of the n-type buffer layer. An n.sup.+ -type source layer and a p.sup.+ -type contact layer are formed in the surface of the p-type base layer. A main gate electrode is arranged to face, through a gate oxide film, a surface of the p-type base layer which is interposed between the n.sup.+ -type source layer and the n.sup.- -type drift layer. An n-type relay layer is formed in the surface of the n.sup.- -type drift layer to face the n.sup.+ -type source layer through the p-type base layer under the main gate electrode. The n-type relay layer extends from the n.sup.- -type drift layer into the p-type base layer. The n-type relay layer decreases the channel resistance.

REFERENCES:
patent: 4823172 (1989-04-01), Mihara
patent: 5089864 (1992-02-01), Sakurai
patent: 5731603 (1998-03-01), Nakagawa et al.
patent: 5920087 (1999-07-01), Nakagawa et al.

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