Selective PVD growth of copper on patterned structures by select

Details Selective PVD growth of copper on patterned structures by select Selective PVD growth of copper on patterned structures by select

1996-10-11

2000-05-16

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438645, 438675, 438674, 438688, H01L 2144

Patent

active

060637072

ABSTRACT:
Features, e.g., vias or lines, are formed of copper by using selective PVD growth. A patterned structure is formed having a underlayer of a material that will accumulate copper by sputtering. An overlayer resputters the copper so that it does not accumulate a layer of copper. Copper is resputtered onto the underlayer using a sputtering ion that has a higher molecular weight than the copper. Copper is used to fill the gap defining the desired feature, and to cover an overlayer. Polishing and etchback are then used to remove the resputtered thin material and remove all of the copper on the upper surface, leaving the copper feature.

REFERENCES:
patent: 5434104 (1995-07-01), Cain et al.

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