Silicon-on-insulator semiconductor device improving electrostati

Details Silicon-on-insulator semiconductor device improving electrostati Silicon-on-insulator semiconductor device improving electrostati

1999-02-25

2000-05-16

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438154, 257347, H01L 2100

Patent

active

060636521

ABSTRACT:
A semiconductor device and a fabrication method thereof using a silicon-on-insulator (SOI) technique has an object of improving electrostatic discharge (ESD) protection capability. In order to achieve the object, there are provided the steps of relatively shallowly forming a portion of a buried oxide film in a first region in a silicon substrate for fabricating an integrated circuit device, relatively deep forming the other portion of the buried oxide film in a second region for fabricating an ESD protection device, for thereby fabricating an SOI substrate, and forming the integrated circuit device on a predetermined portion of the first region of the SOI substrate and the ESD protection device on a predetermined portion of the second region.

REFERENCES:
patent: 5279978 (1994-01-01), See et al.
patent: 5773326 (1998-06-01), Gilbert et al.
Wolf, S. Silicon Processing for the VLSI Era, vol. 2: Process Integration. Lattice Press, 1990. pp. 45-47.
Chan, Mansun et al., "Comparison of ESD Protection Capability of SOI and Bulk CMOS Output Buffers", Proceedings of the 1994 IEEE International Reliability Physics Symposium, pp. 292-298.

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