Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
1998-09-03
2001-08-21
Saadat, Mahshid (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S300000, C257S304000, C257S311000, C257S296000, C257S906000, C257S908000
Reexamination Certificate
active
06278149
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device with trench type capacitors and, more particularly, to the capacitor structure in the logic circuit portion of a DRAM/logic embedded integrated circuit.
In a conventional embedded integrated circuit in which a DRAM and a logic circuit such as MPU or the like, are mixedly disposed, the capacitors provided in the logic circuit portion are realized by the use of planar type capacitors structure. It is because, though trench type capacitors are used in the memory cells in the DRAM portion, the capacitance value thereof is small, so that they are not practically suitable for use in the logic circuit portion.
However, if planar type capacitors are used in the logic circuit portion in order to realize a desired magnitude of capacitance such as, e.g. the power supply stabilization capacitance of a stabilized power supply circuit, then the pattern area occupied by the capacitors becomes large, so that the degree of freedom in the circuit design lowers.
Further, in the case of the conventional DRAM/logic embedded integrated circuit, if the capacitance value of the capacitors is to be altered in the logic circuit portion as required in view of the circuit design from chip to chip, then the manufacturing steps must be altered, the chip-wise alteration is thus difficult.
BRIEF SUMMARY OF THE INVENTION
Accordingly, it is a first object of the present invention to provide a semiconductor device constituted in such a manner that, in realizing a desired capacitance value, the pattern area occupied by the capacitors can be reduced, and yet, the degree of freedom in the circuit design can be enhanced.
A second object of the present invention is to provide a semiconductor device constituted in such a manner that the capacitance value of the capacitors required in view of the circuit design can be easily altered from chip to chip.
The first object of the present invention can be achieved by a semiconductor device which comprises a plurality of trench type capacitors formed in a semiconductor substrate, and a wiring portion which electrically connects the plurality of capacitors to form at least one capacitor block.
According to the above-mentioned structure, a plurality of trench type capacitors are connected in parallel to form at least one capacitor block, so that, by the use of this capacitor block, a desired magnitude or value of capacitance can be realized, and therefore, the pattern area occupied by the capacitors can be reduced, and the degree of freedom in the circuit design can be enhanced.
Further, the above-mentioned second object of the present invention can be realized by a semiconductor device which comprises a plurality of trench type capacitors formed in a semiconductor substrate, wiring portions which electrically connect the plurality of trench type capacitors to form a plurality of capacitor blocks, and connection/separation means which selectively connects the respective above-mentioned wiring portions to each other or selectively separates them from each other to thereby vary the capacitance values of the capacitor blocks.
According to the above-mentioned structure, a plurality of capacitor blocks each comprising a plurality of trench type capacitors connected in parallel can be selectively connected for use, so that the capacitance value of the capacitors required in view of the circuit design can be easily altered.
Additional objects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention may be realized and obtained by means of the instrumentalities and combinations particularly pointed out hereinafter.
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Asao Yoshiaki
Sato Wataru
Banner & Witcoff , Ltd.
Kabushiki Kaisha Toshiba
Saadat Mahshid
Warren Matthew E.
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