Plasma confinement for an inductively coupled plasma reactor

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

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118723IR, 118723MA, 156345, 216 70, 134 11, H01L 21461, B05C 1102, C13F 162, B08B 600

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active

058246070

ABSTRACT:
A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome to provide a plasma source. The antenna generates a high density, low energy plasma inside the chamber. The chamber includes a plurality of magnets for generating magnetic fields. Ion flux is concentrated in certain areas of the chamber and is diverted from other areas of the chamber by using these magnetic fields. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides a means of cleaning the deposition residues from the reactor walls while minimizing damage to the wafer pedestal.

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