Data sensing circuit with additional capacitors for eliminating

Miscellaneous active electrical nonlinear devices – circuits – and – Specific signal discriminating without subsequent control – By amplitude

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327 51, 327 57, 365203, 365207, 365210, G01R 1900

Patent

active

054914353

ABSTRACT:
A data sensing circuit for a semiconductor memory device having complementary bit lines, including a PMOS sense amplifier connected between the complementary bit lines, an NMOS sense amplifier connected between the complementary bit lines, a bit line equalization and precharge circuit connected between the complementary bit lines, a sense amplifier equalization and precharge circuit connected between sensing control nodes of the PMOS and NMOS sense amplifiers, a plurality of first capacitors, a plurality of second capacitors, a plurality of first fuses connected between the sensing control node of the PMOS sense amplifier and respective ones of the first capacitors, a plurality of second fuses connected between the sensing control node of the NMOS sense amplifier and respective ones of the second capacitors. Selected ones of the first and/or second fuses can be selectively blown to thereby couple selected ones of the first and/or second capacitors to the sensing control nodes of the PMOS and NMOS sense amplifiers, respectively, to thereby equalize the capacitances of the sensing control nodes even when they have different parasitic capacitances.

REFERENCES:
patent: 4857768 (1989-08-01), Griffith et al.
patent: 4918341 (1990-04-01), Galbraith et al.
patent: 4982367 (1991-01-01), Miyatake
patent: 5007024 (1991-04-01), Tanaka et al.
patent: 5010523 (1991-04-01), Yamauchi
patent: 5177708 (1993-01-01), Furutani et al.
patent: 5200923 (1993-04-01), Sekiguchi
patent: 5241506 (1993-08-01), Motegi et al.

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