Ferroelectric memory device, a method for read out stored data a

Details Ferroelectric memory device, a method for read out stored data a Ferroelectric memory device, a method for read out stored data a

1997-12-23

1999-08-31

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

36518526, 365117, 365121, G11C 1122

Patent

active

059462248

ABSTRACT:
It is an object of the present invention to provide a ferroelectric memory device having a high integration and capable of maintaining nonvolatility. A threshold voltage V.sub.th of a ferroelectric memory element is set at value slightly higher than a voltage -V.sub.1. A voltage 0V is applied as a gate voltage V.sub.G when the stored data is read out. A voltage V.sub.1 is generated at a MOS capacitor C.sub.MOS if the data "High" is stored and the voltage -V.sub.1 is generated at the MOS capacitor C.sub.MOS if the data "Low" is stored. The stored data is read out by detecting a drain current during generation of the voltages. Also, a voltage 0V is applied as the gate voltage V.sub.G when stand-by operation is carried out. In this way, variation of the gate voltage V.sub.G caused by switching ON and OFF of a power source can be prevented. So that, nonvolatility of the ferroelectric memory device can be maintained as a result of preventing spontaneous polarization of a ferroelectric capacitor C.sub.ferro. Further, it is not necessary to provide a circuit for generating a voltage for using read out the data to the ferroelectric memory device. So that, integration of the ferroelectric memory device can be increased.

REFERENCES:
patent: 5515311 (1996-05-01), Mihara
patent: 5633821 (1997-05-01), Nishimura et al.

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