Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-09-15
1999-08-31
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 37317
Patent
active
059456825
ABSTRACT:
An ion-implantation system for a semiconductor device manufacturing line is designed to save space within the manufacturing line by dividing the system into a first part located adjacent to the manufacturing line and a second part located in the manufacturing line. The first part includes an ion source, an ion-extractor, an ion-exchanger, an ion mass analyzer, an ion accelerator, and a charge exchange and acceleration chamber. The second part includes a charge filter, and an end station on which a wafer is mounted for ion-implantation along an ion beam path. The outlet of the charge exchange and acceleration chamber may also be included in the second part of the system, which is located in the manufacturing line, where semiconductor device manufacturing actually takes place. The first part of the system, which may include the inlet and body of the charge exchange and acceleration chamber, may be located below the manufacturing line.
REFERENCES:
patent: 4524275 (1985-06-01), Cottrell et al.
patent: 5389793 (1995-02-01), Aitken et al.
"Flagship Products", Genus, Inc. World Wide Web Cite (www.genus.com/genus/previous site/products/index.html).
Kim Jueng Gon
Oh Sang Guen
Ro Tae Hyo
Anderson Bruce C.
Samsung Electronics Co,. Ltd.
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