Method of manufacturing a semiconductor device including a proce

Details Method of manufacturing a semiconductor device including a proce Method of manufacturing a semiconductor device including a proce

1997-04-29

1999-05-11

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438672, 438634, 148DIG20, H01L21/44

Patent

active

059021322

ABSTRACT:
A relatively easy manufacturing method of a semiconductor device enabling a contact hole 25 to be formed reliably by self alignment without exposing a gate 11, wherein a plug 20 is adopted to protect an etching stopper film 16 from an etching gas when a preliminary opening 24 is formed by etching an insulating film 22 having an electrical insulating etching stopper film 16 embedded therein.

REFERENCES:
patent: 4997790 (1991-03-01), Woo et al.
patent: 5705427 (1998-01-01), Chan et al.
K.H. Kusters et al., "A High Density 4Mbit dRAM Process Using a Fully Overlapping Bitline Contact (FoBIC) Trench Cell", 1987, pp. 93-94.

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device including a proce does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device including a proce, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device including a proce will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-242416