Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1995-11-21
1997-07-08
Zarabian, A.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
36518907, G11C 1140
Patent
active
056468946
ABSTRACT:
The circuit of this invention improves significantly the programming speed of a Flash EPROM. The circuit includes a detector circuit (DC) using a pre-charge capacitor (C1), capacitor dividers [(C1/(C1+C2) and C3/(C2+C3)] and a voltage comparator (COMP) to signal a control logic circuit (CLC) when the programming voltage is within supply voltage (V.sub.cc) of its final value. At that point the control logic circuit (CLC) boosts the voltage on one terminal of a boost capacitor (BC) by the value of the supply voltage (V.sub.cc). The other terminal (XDD) of the boost capacitor (BC) furnishes the boosted programming voltage for the Flash EPROM.
REFERENCES:
patent: 5075572 (1991-12-01), Poteet
patent: 5446697 (1995-08-01), Yoo
Coffman Tim M.
Lin Sung-Wei
Syzdek Ronald J.
Donaldson Richard L.
Heiting Leo N.
Lindgren Theodore D.
Texas Instruments Incorporated
Zarabian A.
LandOfFree
Smart boost circuit for low voltage flash EPROM does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Smart boost circuit for low voltage flash EPROM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Smart boost circuit for low voltage flash EPROM will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2412670