Storage node capacitor having tungsten and etched tin storage no

Details Storage node capacitor having tungsten and etched tin storage no Storage node capacitor having tungsten and etched tin storage no

1992-08-06

1993-11-16

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257308, 257915, 361313, H01L 2968, H01G 406

Patent

active

052626628

ABSTRACT:
A dynamic random access memory (DRAM) storage cell having a storage contact capacitor comprising a tungsten and TiN storage node capacitor plate and the method for fabricating the same. At least a portion of the storage node capacitor plate is formed vertically in the DRAM. The TiN is controllably etched to increase the area of the storage node capacitor plate. An upper poly layer functions as the cell plate and is insulated from the storage node capacitor plate by a dielectric layer.

REFERENCES:
patent: 4827323 (1989-05-01), Tigelaar et al.
patent: 4974040 (1990-11-01), Taguchi et al.
patent: 5005102 (1991-04-01), Larson
patent: 5130267 (1992-07-01), Kaya et al.
patent: 5155657 (1992-10-01), Oehrlein et al.
IBM Technical Disclosure Bulletin vol. 33 No. 2 Jul. 1990 pp. 245-247, "Stacked Capacitor Dram Cell With Vertical Fins (VF-STC)", No Author.

Affiliated with

Also associated with

Rating

Storage node capacitor having tungsten and etched tin storage no does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Storage node capacitor having tungsten and etched tin storage no, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Storage node capacitor having tungsten and etched tin storage no will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-24120