Non-volatile memory cell having lightly-doped source region

Details Non-volatile memory cell having lightly-doped source region Non-volatile memory cell having lightly-doped source region

1995-08-28

1997-07-08

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257408, H01L 29788

Patent

active

056464304

ABSTRACT:
In one embodiment, a non-volatile memory structure 10 comprises heavily doped source 11 and drain 12 regions formed in the surface of a semiconductor substrate 8 and separated by a channel region. 21. A floating gate 13 is formed over and insulated from the channel region 21 and a control gate 14 is formed over and insulated from the floating gate 13. A lightly doped region 20 is formed in the channel 21 beneath the floating gate 13 and adjoining the source region 11. The lightly doped region 20 is spaced from the surface of said substrate 8. Other embodiments and processes are also disclosed.

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