Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-06-21
1997-07-08
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429814, 20429822, 20429826, C23C 1435
Patent
active
056456999
ABSTRACT:
Two adjacent rotating cylindrical targets are used in a specific form of a vacuum sputtering system to deposit a film of material onto a substrate. Elongated anodes are provided on opposite sides and in between the targets in a manner to make more uniform the rate of deposition across the substrate.
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Patent Abstracts of Japan vol. 018 No. 201 (C-188), 8 Apr. 1994 & JP-A-06-002123 (Mitsubishi Heavy Ind Ltd) 11 Jan. 1994, "abstract".
"Cosputtering and Serial Cosputtering Using Cylindrical Rotatable Magnetrons", A. Belkind, J. Vac. Sci. Technol. A vol. 11(4), Jul./Aug. 1993, pp 1501-1509.
Article of: Sieck, P., "Effect of Anode Location on Deposition Profiles for Long Rotatable Magnetrons," 37th Annual Technical conference of the Society of Vacuum Coaters, Boston, May 8-13, 1994, pp. 233-236.
Draegert David A.
Pace Salvatore P.
The BOC Group Inc.
Weisstuch Aaron
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