Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1995-02-07
1997-07-08
Dang, Thi
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566531, 1566561, 1566571, H01L 2100
Patent
active
056456832
ABSTRACT:
During etching of semiconductor substrate having a polysilicon layer and a silicide layer on the polysilicon layer by plasma etching to produce a processed semiconductor substrate having a patterned silicide layer and a patterned polysilicon layer, the semiconductor substrate is located on a supporting electrode. The temperature of the electrode is controlled to a predetermined temperature. The predetermined temperature may be, for example, 0.degree. C. The silicide layer is etched into the patterned silicide layer by plasma etching. The semiconductor substrate is placed in closer contact with the supporting electrode. A coolant gas is then supplied to the supporting electrode in order to cool the supporting electrode. The polysilicon layer is etched into the patterned polysilicon layer by plasma etching in order to produce the processed semiconductor substrate.
REFERENCES:
patent: 5094712 (1992-03-01), Becker et al.
patent: 5203958 (1993-04-01), Arai et al.
patent: 5259923 (1993-11-01), Hori et al.
Dang Thi
NEC Corporation
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