SRAM semiconductor device

Details SRAM semiconductor device SRAM semiconductor device

1996-08-07

1997-04-08

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257 69, 257903, H01L 2976, H01L 27108, H01L 2711

Patent

active

056190565

ABSTRACT:
The present invention provides an improved static random access memory which can be manufactured into values as designed by photolithography. Second direct contract for connecting active region and ground line for first and second memory cells is provided at a boundary between the first memory cell and second memory cell. Second direct contact is divided into a plurality of portions.

REFERENCES:
patent: 5382807 (1995-01-01), Tsutsumi et al.
Ehkubo et al., 16 Mbit SRAM Cell Technologies for 2.0 V Operation, IEDM, pp. 17.5.1-17.5.4, 1991.
A Split Wordline Cell for 16Mb SRAM Using Polysilicon Sidewall Contacts, Kazuo Itabashi et al., IEDM 91, pp. 477-484.
A 2V-Supply Voltage 16Mb SRAM Cell with Load-Lock-CVD Poly and DCS-WSix Technologies, A. Kawamura et al., 1993 Symposium on VLSI Technology, pp. 67-68.

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